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Issai SHLIMAK





Professor Issai SHLIMAK


List of publications (since 2000)
  1. E. Zion, A. Butenko, A. Sharoni, M. Kaveh, and I. Shlimak. Charge carrier transport asymmetry in monolayer graphene. Phys. Rev. B 96 245143 (2017).

  2. E. Zion, A. Butenko, Yu. Kaganovskii, L. Wolfson, V. Richter, A. Sharoni, E. Kogan, M. Kaveh, and I. Shlimak. Effect of annealing on Raman spectra of monolayer graphene samples gradually disordered by ion irradiation. J. Appl. Phys. 121 114301 (2017).

  3. A. Butenko, E. Zion, Yu. Kaganovskii, L. Wolfson, V. Richter, A. Sharoni, E. Kogan, M. Kaveh, and I. Shlimak. Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions. J. Appl. Phys. 120 044306 (2016).

  4. E. Zion, A.V. Butenko, I. Shlimak, L. Wolfson, V. Richter, Yu. Kaganovskii, A. Sharoni, A. Haran, D. Naveh, E. Kogan, M. Kaveh. Structure and Electron Transport in Irradiated Monolayer Graphene. Future Trends in Microelectronics (Eds. S. Luryi, J.M. Xu and A. Zaslavskii, Wiley/IEEE Press, 2016), p.p. 193-205

  5. I. Shlimak, E. Zion, A.V. Butenko, L. Wolfson, V. Richter, Yu. Kaganovskii, A. Sharoni, A. Haran, D. Naveh, E. Kogan, and M. Kaveh. Hopping magnetoresistance in ion irradiated monolayer graphene Physica E 76 2158 (2016).

  6. A. Bennett, A. Chelly, A. Karsenty, I. Gadasi, Z. Priel, Y. Mandelbaum, T. Lu, I. Shlimak, and Z. Zalevsky. Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures. J. Nanophoton 10(3), 036001 (2016).

  7. E. Zion, A.Haran, A. V. Butenko, L. Wolfson, Yu. Kaganovskii, T. Havdala, A. Sharoni, D. Naveh, V. Richter, M. Kaveh, E. Kogan, and I. Shlimak. Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation. Graphene 4 No. 3, 45 (2015).

  8. I. Shlimak, A.Haran, E. Zion, T. Havdala, Yu. Kaganovskii, A. V. Butenko, L. Wolfson, V. Richter, D. Naveh, A. Sharoni, E. Kogan, and M. Kaveh. Raman scattering and electrical resistance of highly disordered graphene. Phys. Rev. B 91 045414 (2015).

  9. Issai Shlimak. Is Hopping a Sience? Selected Topics of Hopping Conductivity World Scientific Publishing Co. 2015.

  10. W. Liu, TC Lu, QY Chen, YW Hu, SB Dun, and I. Shlimak. Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping. Progress in Natural Science – Materials International 24 226-231 (2014).

  11. D.I. Golosov, I. Shlimak, A. Butenko, K.J. Friedland and S.V. Kravchenko. Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection. Phys. Rev. B 88 155313 (2013).

  12. S. Levy, I. Shlimak, D.H. Dressler, and T. Lu. Direct observation of a multiple-peak structure in the Raman spectra of 74Ge and 70Ge nanocrystals. Journal of Applied Physics 113 044312 (2013).

  13. I. Shlimak, S. Levy, T. Lu, and A.N. Ionov. Irradiation of Germanium Nanocrystals with Reactor Neutrons. Physics of the Solid State 54 No.11, 2201-2204 (2012).

  14. I. Shlimak, A. Butenko, D.I. Golosov, K.J. Friedland and S.V. Kravchenko. Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities. Europhys. Letters 97 37002 (2012).

  15. I.Shlimak, A. Butenko, D.I. Golosov, K.J. Friedland, and S.V. Kravchenko. Current Induced Spin Injection in Si-MOSFET. Solid State Phenomena 190 0129-132 (2012).

  16. S. Levy, I. Shlimak, D. Dressler, J. Grinblat, Y. Gofer, T. Lu, and A.N. Ionov. Structure and Spatial Distribution of Ge Nanocrystals Subjected to Fast Neutron Irradiation. Nanomater. Nanotechnol. 1 52-57 (2011).

  17. Q. Chen, T. Lu, M. Xu, C. Meng, Y. Hu, K. Sun, and I. Shlimak. Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods. Applied Physics Letters 98 073103 (2011).

  18. S. Levy, I. Shlimak, A. Chelly, Z. Zalevsky, and T. Lu. Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures. Physica B-Condenced Matter 404 5189 (2009).
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  19. Y. W. Hu, T. Lu, S. B. Dun, Q. Hu, C. F. You, Q. Y. Chen, N. K. Huang, L. Resnick, I. Shlimak, K. Sun, and W. Xu. Neutron transmutation doping effect on the optical property of germanium nanocrystals. Scripta Materialia 61 970 (2009).
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  20. I. Shlimak, D. I. Golosov, A. Butenko, K.-J. Friedland, and S. V. Kravchenko. Conductance asymmetry of a slot-gate Si-MOSFET in a strong parallel magnetic field. Ann. Phys. (Berlin) 18 913 (2009).
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  21. I. Shlimak. Isotopically engineered Si and Ge for spintronics and quantum computation. J. Magn. Magn. Mater. 321 884 (2009).
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  22. S. B. Dun, T. C. Lu, Y. W. Hu, Q. Hu, L. Q. Yu, Z. Li, N. K. Huang, S. B. Zhang, B. Tang, J. L. Dai, L. Resnick, and I. Shlimak. Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix. Journal of Luminescence 128 1363 (2008).
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  23. I. Shlimak, V. Ginodman, A. Butenko, K. J. Friedland, and S. V. Kravchenko. Electron transport in a slot-gate Si MOSFET. EPL 82 47001 (2008).
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  24. I. Shlimak, K. J. Friedland, S. V. Kravchenko, V. Ginodman, A. Butenko, and T. M. Klapwijk. Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density. Phys. Stat. Sol. (c) 5 839 (2008).
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  25. A. M. Panich, N. A. Sergeev, I. Shlimak, V. I. Ozhogin, and A. V. Tikhomirov. NMR study of the isotopically engineered Ge single crystals. Hyperfine Interactions 180 1 (2007).
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  26. A. M. Panich, N. A. Sergeev, and I. Shlimak. Long-lived spin echoes in a magnetically dilute system: An NMR study of Ge single crystals. Phys. Rev. B 76 155201 (2007).
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  27. Y. W. Hu, T. C. Lu, S. B. Dun, Q. Hu, N. K. Huang, S. B. Zhang, B. Tang, J. L. Dai, L. Resnick, I. Shlimak, S. Zhu, Q. M. Wei, L. M. Wang. The Raman spectroscopy of neutron transmutation doping isotope (74)Germanium nanocrystals embedded in SiO2 matrix. Solid State Commun. 141 514 (2007).
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  28. I. Shlimak and I. Vagner. Quantum information processing based on 31P nuclear spin qubits in a quasi-one-dimensional 28Si nanowire. Phys. Rev. B 75 045336 (2007).
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  29. I. Shlimak, K.-J. Friedland, V. Ginodman, and S. V. Kravchenko. Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime. Phys. Stat. Sol. (c) 3 309 (2006).
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  30. I. Shlimak, V. Ginodman, K.-J. Friedland, and S. V. Kravchenko. Manifestation of the exchange enhancement of valley splitting in the quantum Hall effect regime. Phys. Rev. B 73 205324 (2006).
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  31. I. Shlimak, V. Ginodman, A. Gerber, A. Milner, K.-J. Friedland, and D. J. Paul. Transverse "resistance overshoot" in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime. Europhys. Lett. 69 997 (2005).
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  32. I. Shlimak. Isotopically engineered silicon nanostructures in quantum computation and communication. HAIT Journal of Science and Engineering 1 196 (2004).
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  33. I. Shlimak, V. Ginodman, M. Levin, M. Potemski, D. K. Maude, A. Gerber, A. Milner, and D. J. Paul. Conductivity of weakly and strongly localized electrons in a n-type Si/SiGe heterostructure. Phys. Stat. Sol. (c) 1 67 (2004).
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  34. I. Shlimak and I. D. Vagner. Isotopically engineered Si as a promising material for spintronics and semiconductor-based nuclear spin quantum computers. In: Recent Trends in Theory of Physical Phenomena in High Magnetic Fields, I.D. Vagner et al. (eds.) (Kluwer Academic Publishers, Netherlads, 2003) 281.
  35. I. Shlimak, V. Ginodman, M. Levin, M. Potemski, D. K. Maude, K.-J. Friedland, and D. J. Paul. Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors. Phys. Rev. B 68 075321 (2003).
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  36. M. Levin, T. C. Lu, I. Shlimak, V. Ginodman, L. Resnick. On the influence of the inner d-layer on the low-temperature resistance saturation in gated Si-d-doped double-layered GaAs. Semicond. Sci. Tech. 17 (6) 575 (2002).
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  37. M. Levin, T. C. Lu, I. Shlimak, V. Ginodman, L. Resnick, V. Sandomirskii, K. J. Friedland, R. Hey. Low-temperature resistance saturation in Si-d-doped GaAs structure with P-like gate electrode. Physica E 12 (1-4) 634 (2002).
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  38. M. Levin, T. C. Lu, I. Shlimak, V. Ginodman, L. Resnick, V. Sandomirskii, K. J. Friedland, R. Hey. Low-temperature saturation of 2D variable-range-hopping conductivity induced by the gate covering the mesa edge. Phys. Stat. Sol. B 230 (1) 217 (2002).
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  39. K. J. Freidland, M. Hoerike, R. Hey, I. Shlimak, L. Resnick. Giant persistent photoconductivity induced crossover from strong to weak localization in Si-d-doped GaAs compensated with Be acceptors. Physica A 302 (1-4) 375 (2001).
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  40. I. Shlimak and M. Pepper. Two-dimensional variable-range-hopping conductivity: influence of electron-electron interaction. Phil. Mag. B 81 1093 (2001).
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  41. I. Shlimak, V. I. Safarov, and I. D. Vagner. Isotopically engeneered silicon/silicon-germanium nanostructures as basic elements of a nuclear spin quantum computer. J. Phys.: Condens. Matter 13 6059 (2001).
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  42. L. Burlachkov, V. Ginodman, and I. Shlimak. Interplay of bulk pinning and surface barriers in a current-carrying superconducting film. Physica B 751 284 (2000).
  43. I. Shlimak, S. I. Khondaker, M. Pepper, and D. A. Ritchie. Influence of parallel magnetic fields on a single two-dimensional electron system with a hopping mechanism of conductivity. Phys. Rev. B 61 7253 (2000).
  44. R. Rentzsch, M. Mueller, Ch. Reich, B. Sandow, A. N. Ionov, P. Fozoony, M. J. Lea, V. Ginodman, and I. Shlimak. Analysis of the critical behavior of the Metal-Insulator Transition by variation of the compensation in Neutron-Transmutation-Doped 74Ge-70Ge crystals. Phys. Stat. Sol. (b) 218 233 (2000).
  45. S. I. Khondaker, M. Pepper, D. A. Ritchie, and I. Shlimak. Hopping magnetoresistance in a single 2D layer in parallel magnetic fields. Phys. Stat. Sol. (b) 218 181 (2000).
  46. V. I. Kozub, S. D. Baranovskii, and I. Shlimak. Fluctuation-stimulated variable-range hopping. Solid State Commun. 113 587 (2000).