List of publications (since 2000)
- E. Zion, A. Butenko, A. Sharoni, M. Kaveh, and I. Shlimak.
Charge carrier transport asymmetry in monolayer graphene.
Phys. Rev. B 96 245143 (2017).
- E. Zion, A. Butenko, Yu. Kaganovskii, L. Wolfson, V. Richter, A. Sharoni, E. Kogan, M. Kaveh, and I. Shlimak.
Effect of annealing on Raman spectra of monolayer graphene samples gradually disordered by ion irradiation.
J. Appl. Phys. 121 114301 (2017).
- A. Butenko, E. Zion, Yu. Kaganovskii, L. Wolfson, V. Richter, A. Sharoni, E. Kogan, M. Kaveh, and I. Shlimak.
Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions.
J. Appl. Phys. 120 044306 (2016).
- E. Zion, A.V. Butenko, I. Shlimak, L. Wolfson, V. Richter, Yu. Kaganovskii, A. Sharoni, A. Haran, D. Naveh, E. Kogan, M. Kaveh.
Structure and Electron Transport in Irradiated Monolayer Graphene.
Future Trends in Microelectronics (Eds. S. Luryi, J.M. Xu and A. Zaslavskii, Wiley/IEEE Press, 2016), p.p. 193-205
- I. Shlimak, E. Zion, A.V. Butenko, L. Wolfson, V. Richter, Yu. Kaganovskii, A. Sharoni, A. Haran, D. Naveh, E. Kogan, and M. Kaveh.
Hopping magnetoresistance in ion irradiated monolayer graphene
Physica E 76 2158 (2016).
- A. Bennett, A. Chelly, A. Karsenty, I. Gadasi, Z. Priel, Y. Mandelbaum, T. Lu, I. Shlimak, and Z. Zalevsky.
Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures.
J. Nanophoton 10(3), 036001 (2016).
- E. Zion, A.Haran, A. V. Butenko, L. Wolfson, Yu. Kaganovskii, T. Havdala, A. Sharoni, D. Naveh, V. Richter, M. Kaveh, E. Kogan, and I. Shlimak.
Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation.
Graphene 4 No. 3, 45 (2015).
- I. Shlimak, A.Haran, E. Zion, T. Havdala, Yu. Kaganovskii, A. V. Butenko, L. Wolfson, V. Richter, D. Naveh, A. Sharoni, E. Kogan, and M. Kaveh.
Raman scattering and electrical resistance of highly disordered graphene.
Phys. Rev. B 91 045414 (2015).
- Issai Shlimak.
Is Hopping a Sience? Selected Topics of Hopping Conductivity
World Scientific Publishing Co. 2015.
- W. Liu, TC Lu, QY Chen, YW Hu, SB Dun, and I. Shlimak.
Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping.
Progress in Natural Science – Materials International 24 226-231 (2014).
- D.I. Golosov, I. Shlimak, A. Butenko, K.J. Friedland and S.V. Kravchenko.
Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection.
Phys. Rev. B 88 155313 (2013).
- S. Levy, I. Shlimak, D.H. Dressler, and T. Lu.
Direct observation of a multiple-peak structure in the Raman spectra of 74Ge and 70Ge nanocrystals.
Journal of Applied Physics 113 044312 (2013).
- I. Shlimak, S. Levy, T. Lu, and A.N. Ionov.
Irradiation of Germanium Nanocrystals with Reactor Neutrons.
Physics of the Solid State 54 No.11, 2201-2204 (2012).
- I. Shlimak, A. Butenko, D.I. Golosov, K.J. Friedland and S.V. Kravchenko.
Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities.
Europhys. Letters 97 37002 (2012).
- I.Shlimak, A. Butenko, D.I. Golosov, K.J. Friedland, and S.V. Kravchenko.
Current Induced Spin Injection in Si-MOSFET.
Solid State Phenomena 190 0129-132 (2012).
- S. Levy, I. Shlimak, D. Dressler, J. Grinblat, Y. Gofer, T. Lu, and A.N. Ionov.
Structure and Spatial Distribution of Ge Nanocrystals Subjected to Fast Neutron Irradiation.
Nanomater. Nanotechnol. 1 52-57 (2011).
- Q. Chen, T. Lu, M. Xu, C. Meng, Y. Hu, K. Sun, and I. Shlimak.
Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods.
Applied Physics Letters 98 073103 (2011).
- S. Levy, I. Shlimak, A. Chelly, Z. Zalevsky, and T. Lu.
Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures.
Physica B-Condenced Matter 404 5189 (2009).
(abstract >>) - Y. W. Hu, T. Lu, S. B. Dun, Q. Hu, C. F. You, Q. Y. Chen, N. K. Huang, L. Resnick, I. Shlimak, K. Sun, and W. Xu.
Neutron transmutation doping effect on the optical property of germanium nanocrystals.
Scripta Materialia 61 970 (2009).
(abstract >>) - I. Shlimak, D. I. Golosov, A. Butenko, K.-J. Friedland, and S. V. Kravchenko.
Conductance asymmetry of a slot-gate Si-MOSFET in a strong parallel magnetic field.
Ann. Phys. (Berlin) 18 913 (2009).
(abstract >>) - I. Shlimak.
Isotopically engineered Si and Ge for spintronics and quantum computation.
J. Magn. Magn. Mater. 321 884 (2009).
(abstract >>) - S. B. Dun, T. C. Lu, Y. W. Hu, Q. Hu, L. Q. Yu, Z. Li, N. K. Huang,
S. B. Zhang, B. Tang, J. L. Dai, L. Resnick, and I. Shlimak.
Effect of As doping on the photoluminescence of nanocrystalline
74Ge embedded in SiO2 matrix.
Journal of Luminescence 128 1363 (2008).
(abstract >>) - I. Shlimak, V. Ginodman, A. Butenko, K. J. Friedland, and S. V. Kravchenko.
Electron transport in a slot-gate Si MOSFET.
EPL 82 47001 (2008).
(abstract >>) - I. Shlimak, K. J. Friedland, S. V. Kravchenko, V. Ginodman, A. Butenko,
and T. M. Klapwijk.
Longitudinal resistivity in the quantum Hall effect regime in a split-gate
Si MOSFET with variable electron density.
Phys. Stat. Sol. (c) 5 839 (2008).
(abstract >>) - A. M. Panich, N. A. Sergeev, I. Shlimak, V. I. Ozhogin, and A. V. Tikhomirov.
NMR study of the isotopically engineered Ge single crystals.
Hyperfine Interactions 180 1 (2007).
(abstract >>) - A. M. Panich, N. A. Sergeev, and I. Shlimak.
Long-lived spin echoes in a magnetically dilute system:
An NMR study of Ge single crystals.
Phys. Rev. B 76 155201 (2007).
(abstract >>) - Y. W. Hu, T. C. Lu, S. B. Dun, Q. Hu, N. K. Huang, S. B. Zhang, B. Tang,
J. L. Dai, L. Resnick, I. Shlimak, S. Zhu, Q. M. Wei, L. M. Wang.
The Raman spectroscopy of neutron transmutation doping isotope
(74)Germanium nanocrystals embedded in SiO2 matrix.
Solid State Commun. 141 514 (2007).
(abstract >>) - I. Shlimak and I. Vagner.
Quantum information processing based on 31P nuclear spin qubits
in a quasi-one-dimensional 28Si nanowire.
Phys. Rev. B 75 045336 (2007).
(abstract >>) - I. Shlimak, K.-J. Friedland, V. Ginodman, and S. V. Kravchenko.
Disorder-induced features of the transverse resistance in a Si-MOSFET
in the quantum Hall effect regime.
Phys. Stat. Sol. (c) 3 309 (2006).
(abstract >>) - I. Shlimak, V. Ginodman, K.-J. Friedland, and S. V. Kravchenko.
Manifestation of the exchange enhancement of valley splitting in the quantum Hall effect regime.
Phys. Rev. B 73 205324 (2006).
(abstract >>) - I. Shlimak, V. Ginodman, A. Gerber, A. Milner, K.-J. Friedland, and D. J. Paul.
Transverse "resistance overshoot" in a Si/SiGe two-dimensional electron gas
in the quantum Hall effect regime.
Europhys. Lett. 69 997 (2005).
(abstract >>) - I. Shlimak.
Isotopically engineered silicon nanostructures in quantum computation and communication.
HAIT Journal of Science and Engineering 1 196 (2004).
(abstract >>) - I. Shlimak, V. Ginodman, M. Levin, M. Potemski, D. K. Maude, A. Gerber,
A. Milner, and D. J. Paul.
Conductivity of weakly and strongly localized electrons in
a n-type Si/SiGe heterostructure.
Phys. Stat. Sol. (c) 1 67 (2004).
(abstract >>) - I. Shlimak and I. D. Vagner. Isotopically engineered Si as a promising material for spintronics and semiconductor-based nuclear spin quantum computers. In: Recent Trends in Theory of Physical Phenomena in High Magnetic Fields, I.D. Vagner et al. (eds.) (Kluwer Academic Publishers, Netherlads, 2003) 281.
- I. Shlimak, V. Ginodman, M. Levin, M. Potemski, D. K. Maude,
K.-J. Friedland, and D. J. Paul.
Longitudinal conductivity in Si/SiGe heterostructure
at integer filling factors.
Phys. Rev. B 68 075321 (2003).
(abstract >>) - M. Levin, T. C. Lu, I. Shlimak, V. Ginodman, L. Resnick.
On the influence of the inner d-layer
on the low-temperature resistance saturation in gated
Si-d-doped double-layered GaAs.
Semicond. Sci. Tech. 17 (6) 575 (2002).
(abstract >>) - M. Levin, T. C. Lu, I. Shlimak, V. Ginodman, L. Resnick,
V. Sandomirskii, K. J. Friedland, R. Hey.
Low-temperature resistance saturation in
Si-d-doped GaAs structure
with P-like gate electrode.
Physica E 12 (1-4) 634 (2002).
(abstract >>) - M. Levin, T. C. Lu, I. Shlimak, V. Ginodman, L. Resnick,
V. Sandomirskii, K. J. Friedland, R. Hey.
Low-temperature saturation of 2D variable-range-hopping conductivity
induced by the gate covering the mesa edge.
Phys. Stat. Sol. B 230 (1) 217 (2002).
(abstract >>) - K. J. Freidland, M. Hoerike, R. Hey, I. Shlimak, L. Resnick.
Giant persistent photoconductivity induced crossover from strong to weak
localization in Si-d-doped GaAs compensated with Be acceptors.
Physica A 302 (1-4) 375 (2001).
(abstract >>) - I. Shlimak and M. Pepper.
Two-dimensional variable-range-hopping conductivity: influence of electron-electron
interaction. Phil. Mag. B 81 1093 (2001).
(abstract >>) - I. Shlimak, V. I. Safarov, and I. D. Vagner.
Isotopically engeneered silicon/silicon-germanium nanostructures as basic
elements of a nuclear spin quantum computer. J. Phys.: Condens. Matter
13 6059 (2001).
(abstract >>) - L. Burlachkov, V. Ginodman, and I. Shlimak. Interplay of bulk pinning and surface barriers in a current-carrying superconducting film. Physica B 751 284 (2000).
- I. Shlimak, S. I. Khondaker, M. Pepper, and D. A. Ritchie. Influence of parallel magnetic fields on a single two-dimensional electron system with a hopping mechanism of conductivity. Phys. Rev. B 61 7253 (2000).
- R. Rentzsch, M. Mueller, Ch. Reich, B. Sandow, A. N. Ionov, P. Fozoony, M. J. Lea, V. Ginodman, and I. Shlimak. Analysis of the critical behavior of the Metal-Insulator Transition by variation of the compensation in Neutron-Transmutation-Doped 74Ge-70Ge crystals. Phys. Stat. Sol. (b) 218 233 (2000).
- S. I. Khondaker, M. Pepper, D. A. Ritchie, and I. Shlimak. Hopping magnetoresistance in a single 2D layer in parallel magnetic fields. Phys. Stat. Sol. (b) 218 181 (2000).
- V. I. Kozub, S. D. Baranovskii, and I. Shlimak. Fluctuation-stimulated variable-range hopping. Solid State Commun. 113 587 (2000).